jiangsu changjiang electronics technology co., ltd sot-323 plastic-encapsulate transistors MMST3904 transistor (npn) features ? complementary to mmst3906 marking:k2n maximum ratings (t a =25 unless otherwise noted) symbol parameter value uni t v cbo collector -base voltage 60 v v ceo collector-emitter voltage 40 v v ebo emitter-base voltage 5 v i c collector current 200 ma p c collector power dissipation 200 mw r ja thermal resistance from junction to ambient 625 /w t j junction temperature 150 t stg storage temperature -55 +150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo * i c =10a, i e =0 60 v collector-emitter breakdown voltage v (br)ceo * i c =1ma, i b =0 40 v emitter-base breakdown voltage v (br)ebo * i e =10a, i c =0 5 v collector cut-off current i cbo * v cb =60v, i e =0 60 na collector cut-off current i ceo * v ce =40v, i b =0 500 na v ce =1v, i c =100a 40 v ce =1v, i c =1ma 70 v ce =1v, i c =10ma 100 300 dc current gain h fe * v ce =1v, i c =50ma 60 i c =10ma, i b =1ma 0.25 v collector-emitter saturation voltage v ce(sat) * i c =50ma, i b =5ma 0 .3 v i c =10ma, i b =1ma 0.85 v base-emitter saturation voltage v be(sat) * i c =50ma, i b =5ma 0 .95 v transition frequency f t v ce =20v,i c =10ma , f=100mhz 300 mhz collector output capacitance c ob v cb =5v, i e =0, f=1mhz 4 pf collector output capacitance c ib v eb =0.5v, i e =0, f=1mhz 8 pf delay time t d 35 ns rise time t r v cc =3v, v be(off) =0.5v i c =10ma, i b1 =1ma 35 ns storage time t s 225 ns fall time t f v cc =3v, i c =10ma, i b1 = i b2 =1ma 75 ns *pulse test: pulse width 300s,duty cycle 2.0%. sot C 323 1. base 2. emitter 3. collector collector cut-off current i ce x v ce = 3 0v, v be(off) =3v 5 0 na www.cj-elec.com 1 a,jun,2014 www.cj-elec.com c,sep,2014 j c ( t b,nov,2013
0.1 1 10 100 0 50 100 150 200 250 300 0 25 50 75 100 125 150 0 50 100 150 200 250 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 11 01 0 0 0 100 200 300 400 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 5 10 15 20 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1 10 100 200 v ce = 1v t a =100 o c t a =25 o c collector current i c (ma) dc current gain h fe i c h fe ?? collector power dissipation p c (mw) ambient temperature t a ( ) p c ?? t a 200 collector current i c (ma) base-emitter saturation voltage v besat (v) t a =25 t a =100 =10 i c v besat ?? 200 t a =25 t a =100 =10 v cesat ?? i c collector-emitter saturation voltage v cesat (mv) collector current i c (ma) common emitter t a =25 100ua 90ua 80ua 70ua 60ua 50ua 40ua 30ua 20ua i b =10ua collector-emitter voltage v ce (v) collector current i c (ma) static characteristic 200 v ce =1v t a =25 t a =100 o c base-emitter voltage v be (v) collector current i c (ma) i c ?? v be www.cj-elec.com 2 a,jun,2014 www.cj-elec.com c,sep,2014 7 \ s l f d o & k d u d f w h u l v w l f v b,nov,2013
mi n ma x min max a 0.900 1.100 0.035 0.043 a1 0.000 0.100 0.000 0.004 a2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 d 2.000 2.200 0.079 0.087 e 1.150 1.350 0.045 0.053 e1 2.150 2.450 0.085 0.096 e e1 1.200 1.400 0.047 0.055 l l1 0.260 0.460 0.010 0.018 0 8 0 8 0.525 ref 0.021 ref symbol dimensions in millimeters dimensions in inches 0.650 typ 0.026 typ 6 2 7 3 d f n d j h 2 x w o l q h ' l p h q v l r q v 6 2 7 6 x j j h v w h g 3 d g / d \ r x w www.cj-elec.com 3 a,jun,2014 www.cj-elec.com c,sep,2014
so t -323 tape and reel
|
